? 2001 ixys all rights reserved 1 - 2 dgs 20-022a dgsk 40-022a dgs 20-025a dgsk 40-025a v rsm v rrm type v v 220 220 dgs 20-022a 250 250 dgs 20-025a v rsm v rrm type v v 220 220 dgsk 40-022a 250 250 dgsk 40-025a preliminary data ac c to-220 ac a c (tab) a = anode, c = cathode , tab = cathode single common cathode to-220 ab a c a c (tab) aca 119 symbol conditions maximum ratings i fav t c = 25 c; dc 18 a i fav t c = 90 c; dc 13 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 30 a t vj -55...+175 c t stg -55...+150 c p tot t c = 25 c48w m d mounting torque 0.4...0.6 nm features low forward voltage very high switching speed low junction capacity of gaas - low reverse current peak at turn off soft turn off temperature independent switching behaviour high temperature operation capability epoxy meets ul 94v-0 applications mhz switched mode power supplies (smps) small size smps high frequency converters resonant converters pulse test: pulse width = 5 ms, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified ixys reserves the right to change limits, conditions and dimensions. gallium arsenide schottky rectifier i fav = 18 a v rrm = 220/250 v c junction = 26 pf symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 2.0 ma t vj = 125c v r = v rrm 2.0 ma v f i f = 7.5 a; t vj = 125c 1.3 v i f = 7.5 a; t vj = 25c 1.2 1.5 v c j v r = 100 v; t vj = 125c 26 pf r thjc 3.1 k/w r thch 0.5 k/w weight 2g
? 2001 ixys all rights reserved 2 - 2 dgs 20-022a dgsk 40-022a dgs 20-025a dgsk 40-025a 0.0 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 t s k/w 0.1 1 10 100 1000 10 100 c j i f a v f v r v pf v z thjc t vj = 125 c 25 c dgs10-015/018bs t vj = 125 c 300 30 single pulse 119 fig. 1 typ. forward characteristics fig. 2 typ. junction capacity versus blocking voltage fig. 3 typ. thermal impedance junction to case note: explanatory comparison of the basic operational behaviour of rectifier diodes and gallium arsenide schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics by majority + minority carriers v f (i f ) extraction of excess carriers causes temperature dependant reverse recovery (t rr , i rm , q rr ) delayed saturation leads to v fr rectifier diode by majority carriers only v f (i f ), see fig. 1 reverse current charges junction capacity c j , see fig. 2; not temperature dependant no turn on overvoltage peak gaas schottky diode outline (center pin only for dgsk types) dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.38 0.56 0.015 0.022 r 2.29 2.79 0.090 0.110
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